Recent Progress on the Mechanism and Kinetics of Additives in Copper Plating on Integrated Circuit Substrate
WEI Wenjing1,2, HUANG Xun1, WEI Zidong1
1. School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 401331, China;
2. AT&S (Chongqing) Company Limited, Chongqing 401133, China
Abstract：Copper electroplating is a key process that restricts the quality and production capacity of integrated circuit (IC) substrate. The quality of copper electroplating directly affects the electrical performance and reliability of electronic products. With the rapid development of artificial intelligence (AI), 5G application and smart manufacturing, the market has higher requirements for copper plating technology of IC substrate. In order to provide assistance for the optimization and innovation of copper electroplating processes in industrial applications of IC substrate, this paper reviewed the mechanisms of the basic plating solution and various additives (accelerators, inhibitors and leveling agents) of the copper electroplating for IC substrate, introduced the application of kinetic modelling in copper electroplating technology, and focused on the effect of the additives’ interaction on electrochemical kinetics. This paper also raised the main problem of existing kinetic model that most of kinetic parameters were artificially set, which limited its application. It was advocated to develop a more universal and high precision electrode kinetic model based on a comprehensive understanding of the additive mechanism, which provided the strong support to optimize copper electroplating processes in actual industrial application.
WEI Wenjing,HUANG Xun,WEI Zidong. Recent Progress on the Mechanism and Kinetics of Additives in Copper Plating on Integrated Circuit Substrate[J]. Chemical Reaction Engineering and Technology, 2025, 41(1): 119-133.
