Investigation on the Dynamic Characteristics of Double Distributor Fluidized Bed for Aromatics Ammoxidation II. Pressure Fluctuation Law in the Region Affected by the Double Distributor
LI Yongzheng, XU Jun, ZHONG Siqing, GU Longqin, YANG Weimin
State Key Laboratory of Green Chemical Engineering and Industrial Catalysis, Shanghai Research Institute of Petrochemical
Technology, SINOPEC, Shanghai 201208, China
Abstract The pressure signal in the region affected by double distributor was measured on a cold mode test platform of gas-solid fluidized bed. Bed pressure distributions and pressure fluctuation characteristics at different superficial gas velocities, initial bed heights, gas flow ratios of double distributor, and distributor spacing were analyzed using time-averaged pressure, standard deviation and power spectrum density. The results showed that the pressure fluctuation increased with superficial gas velocity or initial bed height, especially in the dense phase zone at the bottom of the fluidized bed. The pressure signal was low-frequency pulsation. With the increase of superficial gas velocity or initial bed height, the principal frequency of pressure fluctuation decreased slightly but the signal energy corresponding to the principal frequency increased obviously. The gas flow ratio or spacing of the upper and lower distributors had a significant effect on the pressure fluctuation, which was determined by joint action of bubble growth law and bubble size.
LI Yongzheng,XU Jun,ZHONG Siqing et al. Investigation on the Dynamic Characteristics of Double Distributor Fluidized Bed for Aromatics Ammoxidation II. Pressure Fluctuation Law in the Region Affected by the Double Distributor[J]. Chemical Reaction Engineering and Technology, 2022, 38(4): 289-297.
LI Yongzheng,XU Jun,ZHONG Siqing et al. Investigation on the Dynamic Characteristics of Double Distributor Fluidized Bed for Aromatics Ammoxidation II. Pressure Fluctuation Law in the Region Affected by the Double Distributor[J]. Chemical Reaction Engineering and Technology, 2022, 38(4): 289-297.
